Record Details

Title:
Disorder-Induced Localization in Crystalline Pseudo-Binary $GeTe-Sb_{2}Te_{3}$ Alloys between $Ge_{3}Sb_{2}Te_{6}$ and $GeTe$
Affiliation(s):
EuXFEL staff, Other
Author group:
Instrument FXE
Topic:
Abstract:
Disorder has a tremendous impact on charge transport in crystalline compounds on the pseudo-binary line between $Sb_{2}Te_{3}$ and $GeTe$. Directly after crystallization, the pronounced disorder on the cation sublattice renders crystalline $Ge_{1}Sb_{2}Te_{4}$—a composition with a carrier density of the order of $10^{20} cm^{−3}$—an Anderson insulator. Annealing, however, induces the reduction of disorder and eventually triggers an insulator-to-metal transition. This study presents data on the electrical properties, the optical conductivity, and structural properties of the pseudo-binary compositions between $Ge_{3}Sb_{2}Te_{6}$ and $GeTe$. In contrast to the preceding investigations, which rely on the annealing temperature for tuning the electrical properties, this study elucidates the impact of stoichiometry and demonstrates that the stoichiometry may be employed as an alternative control parameter for the metal-to-insulator transition. The combination of annealing temperature and stoichiometry, therefore, provides a rich playground for tailoring disorder and, as a consequence, the transport of charge.
Imprint:
Weinheim, Wiley-VCH, 2015
Journal Information:
Adv. Funct. Mater., 25, 40, 6399-6406 (2015)
ISSN:
1057-9257
1099-0712
1616-301X
1616-3028
Related external records:
DOI: 10.1002/adfm.201500848
WOS: WOS:000363685900011
Language(s):
English
Record appears in:

Export

Record created 2016-10-11, last modified 2019-02-12

OpenAccess:
PDF
External link:
Fulltext
Rate this document:

1
2
3

(Not yet reviewed)