Record Details

Title:
Investigation of damage induced by intense femtosecond XUV pulses in silicon crystals by means of white beam synchrotron section topography
Affiliation(s):
EuXFEL staff
Author group:
Management Board
X-Ray Optics
Topic:
Abstract:
Silicon crystalline samples were exposed to intense single pulses of XUV radiation (λ=13.5 nm) what lead to melting and ablation of the surface material. The deformation field around craters along the whole thickness of silicon wafers was observed by means of the synchrotron transmission section topography using the beam perpendicular to the surface of the sample. The geometrical shape and depth extension around craters was evaluated based on numerous, dense series of section topographs spaced by 10 µm. In the topographs we observed the direct image connected with the boundary of the crater associated with some deformation of the Kato fringes. The evaluated depth extension, different for individual craters, was in the range of 30–100 µm. The depth values were confirmed also by evaluations based on the Bragg case section topographs.It was possible to reproduce the contrast of the craters in transmission section topographs by numerical simulation based on integration of the Takagi–Taupin equations. The damage of the crystal defects connected with craters was approximated as droplet-like inclusions.
Imprint:
Oxford [u.a.], Pergamon Press, 2013
Journal Information:
Radiat. Phys. Chem., 93, 99-103 (2013)
ISSN:
1359-0197
1879-0895
0146-5724
0969-806X
1878-1020
Related external records:
DOI: 10.1016/j.radphyschem.2013.04.025
WOS: WOS:000326910900019


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 Record created 2016-10-11, last modified 2019-01-30

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