Current work is devoted to synthesizing and studying atomic and electronic structure of several low-dimensional carbon-based nanomaterials, which can be of interest for fabrication of advanced electronic devices. All of them exhibit a π-conjugated structure, which promises high stability and endurance in the case of employment in technological applications. Chapters 1 and 2 serve for a general introduction and description of experimental techniques used to investigate the low-dimensional carbon-based nano-materials in the current work. The first example is mono-, bi-, and tri-layer graphene grown on cubic-SiC(001). Chapter 3 depicts investigation of the atomic and electronic structure of graphene depending on the number of its layers epitaxially grown on SiC substrate. The feasibility of facile CVD growth of cubic-SiC on conventional silicon wafers makes such graphene type compatible with existing silicon technologies. Hence, it is a good candidate for embedding into existing routines of electronic device fabrication. Chapter 4 is dedicated to investigating composite structure obtained via chemical modification of few-layer graphene on cubic-SiC(001) with Neutral red dye derivatives using the diazonium chemistry approach. This results in the synthesis of a layered structure, the surface layer of which exhibits semiconducting properties while buried graphene layers stay semimetallic. Such a system may be of interest for optoelectronic applications. Chapter 5 focuses on study of hybrid organic-inorganic systems consisting of semiconducting thin films of planar tetrafluoro-substituted copper phthalocyanine molecules ($CuPcF_{4}$) with self-organized indium nanoparticles of variable size at its surface and in the volume. Such thin films can be considered for application as an active layer in resistive random-access memory devices.